W3Se2S4 is a mixed-chalcogenide semiconductor compound combining tungsten with selenium and sulfur, representing an emerging class of layered transition metal dichalcogenides (TMDs) with tunable electronic properties. This material is primarily explored in research and early-stage development for optoelectronic and energy conversion applications, where its mixed-anion composition offers advantages over single-chalcogenide alternatives in band gap engineering and carrier mobility tuning. The incorporation of both selenium and sulfur enables researchers to customize material properties for specific device architectures without requiring complex doping strategies.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 40.40 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 28.70 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6921 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7400 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data