VGaAs

metal

· JVASP-75575· VGaAs

VGaAs is a vanadium-gallium arsenide compound that belongs to the III-V semiconductor material family. This material is primarily of research and development interest for optoelectronic and high-frequency applications where the combination of vanadium doping and GaAs substrate offers potential for tunable electronic or magnetic properties. While not yet widely commercialized, VGaAs represents experimental work in semiconductor doping strategies to enhance device performance in specialized RF, microwave, or photonic applications.

semiconductor researchoptoelectronic deviceshigh-frequency electronicsIII-V compound researchmagnetic semiconductors (potential)laboratory/prototype development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	5.436	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	3.122	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.8598	eV/atom	—
Formation Energy(ΔHf)	0.5053	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

VGaAs

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control