Vanadium oxide compound (VAgO3) is a mixed-valence oxide semiconductor combining vanadium and silver in its crystal structure. This material exists primarily in research contexts as a potential candidate for functional oxide applications, where its unique electronic properties derived from vanadium's variable oxidation states could enable sensing, catalytic, or energy-storage device functionality. The incorporation of silver offers possibilities for tuning electrical conductivity and photocatalytic behavior compared to simple vanadium oxides.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.429 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)4 entries | 1.278 | eV | DFT · OptB88vdW | ||
| ↳ | 1.424 | eV | DFT · TBmBJ | ||
| ↳ | 1.337 | eV | DFT · PBE | ||
| ↳ | 0.000 | eV | DFT · GLLB-SC | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 8.884 | - | DFT · OptB88vdW | ||
| ↳ | 7.298 | - | DFT · TBmBJ | ||
Magnetic Moment(μB)3 entries | 0.000 | μB | DFT | ||
| ↳ | -2.006 | μB | DFT | ||
| ↳ | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.000709 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.000387 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -361 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 382.6 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 33.37 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00890 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)3 entries | -1.633 | eV/atom | DFT | ||
| ↳ | 1.480 | eV/atom | DFT | ||
| ↳ | -1.805 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data