V6 B4 is a boron-containing semiconductor compound, likely a metal boride or boron-rich ceramic in the vanadium-boron system. This material represents an emerging class of ultra-hard, refractory semiconductors of interest in materials research for extreme environment applications. While not yet widely commercialized, vanadium boride compounds are being investigated for their potential in high-temperature electronics, wear-resistant coatings, and abrasive applications where conventional semiconductors fail.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 254.1 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 191.4 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00220 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6970 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data