V4Zn2O12 is a mixed-metal oxide semiconductor compound containing vanadium and zinc, belonging to the family of complex oxide materials under investigation for functional electronic and photonic applications. This composition represents an experimental or specialized research material rather than a commodity semiconductor, with potential applications in oxide-based electronics where the combined properties of vanadium and zinc oxides may offer advantages in catalysis, gas sensing, or photocatalytic processes. Engineers would consider this material when conventional semiconductors are insufficient and the unique electronic structure afforded by multi-metal oxide systems becomes relevant to device function.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 99.21 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 44.41 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.678 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.183 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data