V3As2O9 is a vanadium arsenate oxide semiconductor compound that belongs to the family of mixed-metal oxide semiconductors. This material is primarily studied in research contexts for potential applications in electronic and photonic devices, where its semiconductor properties could enable light absorption, charge transport, or catalytic functionality. While not yet widely commercialized, vanadium arsenate compounds represent an emerging class of materials of interest for next-generation electronics and environmental remediation applications where their chemical composition offers tunable band structure and redox activity.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 80.74 | GPa | — | ||
Poisson's Ratio(ν) | 0.2400 | - | — | ||
Shear Modulus(G) | 48.67 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.246 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.7600 | eV | — | ||
| ↳ | 0.6790 | eV | — | ||
Magnetic Moment(μB) | 5.998 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.04850 | eV/atom | — | ||
Formation Energy(ΔHf) | -2.050 | eV/atom | — |