V2Zn3TeO10

semiconductor

· V2Zn3TeO10

V2Zn3TeO10 is an oxide semiconductor compound containing vanadium, zinc, and tellurium, belonging to the mixed-metal oxide family of materials. This is primarily a research compound rather than an established commercial material; such vanadium-zinc tellurate compositions are investigated for their potential optoelectronic and photocatalytic properties, with interest stemming from their ability to potentially bridge bandgap engineering and visible-light absorption compared to simple binary oxides. Engineers exploring advanced ceramics for photocatalytic applications, photovoltaic research, or next-generation semiconductor devices may evaluate this compound, though applications remain largely experimental and material availability is typically limited to research synthesis.

photocatalytic materials researchsemiconductor bandgap engineeringvisible-light absorption ceramicsexperimental optoelectronicsmixed-metal oxide researchadvanced ceramic development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.960	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

V2Zn3TeO10

Electrical Properties

Regulatory Screening

Environmental

Export Control