V2S2 is a layered transition metal dichalcogenide semiconductor compound composed of vanadium and sulfur. While primarily of research interest rather than established commercial production, V2S2 belongs to the family of 2D materials being investigated for next-generation electronic, optoelectronic, and energy storage applications. The material is notable for its potential in flexible electronics, catalysis, and quantum device research, where its layered structure and semiconducting properties offer advantages over conventional silicon-based alternatives in specific niche applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 141.6 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 68.45 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00830 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6380 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data