V₂Ge₂Hf₂ is an experimental transition metal compound combining vanadium, germanium, and hafnium in an equiatomic ratio, belonging to the semiconductor material family. This multi-principal element composition is part of emerging research into high-entropy and complex intermetallic semiconductors, which aim to achieve novel electronic properties and thermal stability beyond conventional binary or ternary semiconductors. While not yet commercialized, materials in this class are being investigated for next-generation high-temperature electronics, radiation-tolerant devices, and advanced optoelectronic applications where conventional semiconductors reach performance limits.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 156.7 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 89.11 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00130 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5890 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data