V2Ga4Er1 is an experimental ternary intermetallic compound combining vanadium, gallium, and erbium, belonging to the broader class of rare-earth-containing semiconductors and metallic compounds. This material is primarily of research interest rather than established industrial production, with potential applications in advanced electronic and photonic devices where rare-earth doping can introduce novel magnetic or optical properties. The compound's relevance lies in exploratory materials science seeking to leverage erbium's luminescent and magnetic characteristics within a vanadium-gallium matrix for next-generation semiconductor technologies.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 116.3 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 74.29 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00500 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3820 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data