V2Bi2Pb2O10 is a mixed-metal oxide semiconductor compound containing vanadium, bismuth, and lead oxides, belonging to the class of complex perovskite-related or pyrochlore-type ceramic semiconductors. This material is primarily of research and developmental interest, studied for potential applications in photocatalysis, ionics, and electronic devices where its mixed-valence metal composition and layered oxide structure may offer tunable electronic properties. Engineers would consider this material in early-stage development contexts where novel oxide semiconductors with specific band gaps or mixed-conductivity pathways are being evaluated, rather than as an established industrial solution.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.612 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.946 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data