V10 Ge6 B2

semiconductor

· V10 Ge6 B2

V10Ge6B2 is a vanadium-germanium-boron ternary compound belonging to the family of intermetallic and ceramic semiconductors. This appears to be a research or specialized material rather than a widely commercialized composition; compounds in this system are investigated for potential applications in high-temperature semiconducting devices, thermoelectric materials, and advanced ceramics where the combination of vanadium, germanium, and boron provides unique electronic and thermal properties.

high-temperature semiconductorsthermoelectric devicesresearch materialsadvanced ceramicselectronic componentsspecialty alloys

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00610	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4210	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

V10 Ge6 B2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control