V10As6 is a vanadium arsenide compound belonging to the intermetallic or transition metal pnictide family. This material is primarily of research and developmental interest, studied for potential applications in thermoelectric devices, high-temperature electronics, and solid-state energy conversion where the combination of vanadium and arsenic offers unique electronic and thermal properties. While not yet widely deployed in mainstream engineering applications, materials in this family are investigated as alternatives to conventional semiconductors and thermoelectrics due to their potential for enhanced performance at elevated temperatures or in specialized device architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000200 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3730 | eV/atom | — |