V1Te2 is a vanadium telluride semiconductor compound belonging to the transition metal chalcogenide family, characterized by layered crystal structures and tunable electronic properties. This material is primarily of research and emerging technology interest rather than established industrial production, with potential applications in thermoelectric devices, optoelectronic components, and next-generation electronics where its unique band structure and thermal transport properties could offer advantages over conventional semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 40.11 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 23.69 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00350 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2930 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data