V1 Tc1 is a semiconductor material belonging to a transition metal compound family, though its specific composition requires further specification in material databases. Limited publicly available information suggests this may be a research or proprietary material designation; engineers should verify exact phase composition and dopant concentration with the supplier before design decisions. Potential applications would align with semiconductor families used in power electronics, optoelectronics, or emerging quantum devices, depending on its bandgap and carrier mobility characteristics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 256.9 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 123.4 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00960 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3600 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data