V₁Sn₁O₄ is a mixed-metal oxide semiconductor compound combining vanadium and tin oxides. This material belongs to the family of transition metal oxides studied for electronic and photonic applications, though it remains primarily in the research and development phase rather than established industrial production. The compound is of interest to researchers exploring novel semiconductor materials with potential applications in sensing, catalysis, and energy conversion devices where the combined properties of vanadium and tin oxides may offer advantages over single-component alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 211.2 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 111.0 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00920 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.066 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data