V1 Mo2 S4
semiconductorV₁Mo₂S₄ is a layered transition metal dichalcogenide (TMD) compound combining vanadium and molybdenum sulfides, belonging to the family of two-dimensional semiconductors with potential for electronic and catalytic applications. This material is primarily in research and development stages, investigated for its tunable band gap, anisotropic electrical properties, and catalytic activity in hydrogen evolution reactions (HER) and other electrochemical processes. Engineers and researchers are exploring V₁Mo₂S₄ as a promising alternative to single-component MoS₂ or VS₂ systems due to its mixed-metal composition, which can enhance performance in energy conversion, sensing, and catalytic applications where the synergistic effects of multiple transition metals offer improved efficiency over conventional materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |