V1 Mn2 Ga1

semiconductor

· V1 Mn2 Ga1

V₁Mn₂Ga₁ is an intermetallic semiconductor compound from the Heusler alloy family, combining vanadium, manganese, and gallium in a fixed stoichiometric ratio. This material is primarily studied in research contexts for spintronic and magnetoelectronic applications, where its unique electronic band structure and potential magnetic properties make it a candidate for next-generation memory devices, magnetic sensors, and quantum computing architectures that exploit spin-dependent phenomena.

spintronics researchmagnetic semiconductorsspin valves and sensorsquantum computing qubitsthermoelectric devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	192.7	GPa	—
Shear Modulus(G)	88.94	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01840	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.1960	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

V1 Mn2 Ga1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control