V1 Ir1 O3

semiconductor

· V1 Ir1 O3

V1Ir1O3 is a ternary oxide semiconductor compound containing vanadium and iridium. This material belongs to the family of mixed-metal oxides and represents an experimental composition of interest in condensed matter physics and materials research, rather than an established industrial material. The vanadium-iridium oxide system is investigated for potential applications in catalysis, energy storage, and electronic devices where the combined redox chemistry of vanadium and iridium may enable unique electrochemical or transport properties.

catalyst researchenergy storage devicessemiconductor researchelectrochemistry applicationsmixed-metal oxide compoundsexploratory materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	195.0	GPa	—
Shear Modulus(G)	35.76	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00780	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.3790	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

V1 Ir1 O3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control