V1 Ga1 Tc2

semiconductor

· V1 Ga1 Tc2

V1Ga1Tc2 is an experimental ternary intermetallic compound combining vanadium, gallium, and technetium in a 1:1:2 stoichiometric ratio. This is a research-phase material within the broader family of transition-metal-based semiconductors and intermetallics, with potential applications in high-temperature electronics or specialized nuclear/radiological contexts given technetium's presence. The material's practical engineering use remains limited pending further characterization; it represents exploratory work in advanced semiconductor or refractory compound development rather than an established industrial baseline.

experimental semiconductorshigh-temperature electronics researchintermetallic compound developmentnuclear/radiological applications (potential)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01890	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.2050	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

V1 Ga1 Tc2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control