V1 Cu1 O3

semiconductor

· V1 Cu1 O3

V1Cu1O3 is a ternary oxide semiconductor compound combining vanadium and copper in a 1:1 ratio with oxygen, representing an experimental material in the mixed-metal oxide family. Research into vanadium-copper oxide systems focuses on electrochemical and catalytic applications, where the dual transition metals can create tunable electronic structures and enhanced redox activity compared to single-metal oxides. This compound is primarily of interest in emerging technologies rather than established high-volume industrial production, with potential relevance where synergistic metal-oxygen interactions are needed.

catalytic materials researchelectrochemical energy storagesemiconductor device developmentmixed-metal oxide studiesemerging functional ceramics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	30.72	GPa	—
Shear Modulus(G)	16.59	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.9401	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.831	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

V1 Cu1 O3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control