V₁Cu₁O₂ is a mixed-metal oxide semiconductor combining vanadium and copper in a 1:1 ratio, belonging to the family of transition-metal oxides with potential for electronic and photonic applications. This compound is primarily of research interest rather than established industrial use, with potential applications in catalysis, photocatalysis, and solid-state electronics where the mixed-valence copper-vanadium system may offer tunable electronic properties and enhanced redox activity. Engineers considering this material should evaluate it as an emerging alternative for niche applications requiring controlled band-gap engineering or catalytic performance, though maturity and scalability remain active research areas.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 168.8 | GPa | — | ||
Shear Modulus(G) | 50.65 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00580 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.744 | eV/atom | — |