V₁Co₂Sn₁ is an intermetallic compound semiconductor containing vanadium, cobalt, and tin in a 1:2:1 stoichiometric ratio. This is a research-phase material being investigated for potential applications in thermoelectric energy conversion and advanced electronic devices, where intermetallics offer the prospect of tuning band structure and carrier mobility through compositional control. The material belongs to a broader class of ternary intermetallic semiconductors that are explored as alternatives to conventional binary semiconductors when enhanced mechanical rigidity, thermal stability, or specific electronic properties are needed.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 179.7 | GPa | — | ||
Shear Modulus(G) | 31.70 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00620 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.04800 | eV/atom | — |