V1B1O4 is a vanadium boron oxide compound belonging to the mixed-metal oxide semiconductor family, likely of interest in emerging materials research rather than established industrial production. This ternary oxide system bridges vanadium and boron chemistries and may exhibit electrochemical or photocatalytic properties relevant to energy storage, catalysis, or optoelectronic applications. The material's potential utility depends on its crystal structure and electronic properties, which position it in the broader context of layered oxides and wide-bandgap semiconductors being explored for next-generation devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.754 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.426 | eV/atom | — |