V1 B1 O4

semiconductor
· V1 B1 O4

V1B1O4 is a vanadium boron oxide compound belonging to the mixed-metal oxide semiconductor family, likely of interest in emerging materials research rather than established industrial production. This ternary oxide system bridges vanadium and boron chemistries and may exhibit electrochemical or photocatalytic properties relevant to energy storage, catalysis, or optoelectronic applications. The material's potential utility depends on its crystal structure and electronic properties, which position it in the broader context of layered oxides and wide-bandgap semiconductors being explored for next-generation devices.

catalytic materials researchenergy storage electrodesphotocatalysis applicationswide-bandgap semiconductorsmixed-metal oxide electronicsmaterials discovery phase

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
eV/atom
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.