UVO3 is an experimental metal oxide semiconductor compound, part of the broader family of ternary oxides being investigated for advanced electronic and optoelectronic applications. Research into this material is motivated by exploring novel combinations of metal cations and oxygen coordination for tunable electronic properties, though it remains primarily in the laboratory stage without established commercial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.685 | eV | — | ||
Magnetic Moment(μB) | 1.000 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.176 | eV/atom | — |