U2Te2O2 is an experimental uranium tellurium oxide semiconductor compound under investigation in materials research for potential optoelectronic and solid-state applications. This ternary oxide belongs to the family of uranium-based semiconductors, which are studied for their unique electronic properties and potential use in specialized radiation detection and nuclear-related sensing technologies. The compound represents exploratory chemistry combining actinide metallurgy with chalcogenide semiconductors, making it primarily relevant to research-phase development rather than established commercial manufacturing.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 57.81 | GPa | — | ||
Shear Modulus(G) | 41.13 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00240 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.187 | eV/atom | — |