U1 Tl2 O4

semiconductor

· U1 Tl2 O4

U₁Tl₂O₄ is an experimental mixed-metal oxide semiconductor combining uranium and thallium in a layered crystal structure. This compound belongs to the family of complex transition metal oxides under investigation for potential electronic and photonic applications, though it remains primarily a research material without established commercial production or deployment. Interest in this compound centers on understanding how the uranium and thallium cations interact within the oxide lattice to produce novel electronic properties that may differ significantly from their constituent binary oxides.

research and developmentsemiconductor physicssolid-state electronic materialsmaterials characterizationadvanced functional ceramics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	61.99	GPa	—
Shear Modulus(G)	22.73	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.586	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.285	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

U1 Tl2 O4

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control