Tm₄Mn₄Ge₄ is an intermetallic semiconductor compound composed of thulium, manganese, and germanium in a 1:1:1 stoichiometric ratio. This material represents an experimental research compound within the broader family of rare-earth transition-metal germanides, which are being investigated for potential thermoelectric, magnetic, and optoelectronic applications. While not yet commercialized at scale, compounds in this family are of interest to researchers exploring next-generation semiconductors with tunable band structures and magnetic properties for advanced energy conversion and sensing technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 100.5 | GPa | — | ||
Shear Modulus(G) | 31.81 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01410 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4710 | eV/atom | — |