Tm3 In1 N1

semiconductor

· Tm3 In1 N1

Tm₃In₁N₁ is a rare-earth nitride semiconductor compound combining thulium and indium in a ternary crystal structure. This is an experimental/research material within the family of rare-earth metal nitrides, which are being investigated for advanced optoelectronic and high-temperature semiconductor applications where conventional semiconductors reach performance limits. The combination of rare-earth and group-III elements offers potential for tunable bandgap properties and thermal stability, making it of interest to researchers exploring next-generation wide-bandgap semiconductors, though practical industrial applications remain limited and material synthesis and characterization are ongoing.

research and developmenthigh-temperature semiconductorsoptoelectronic devicesrare-earth materialswide-bandgap applicationslaboratory synthesis

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	99.00	GPa	—
Shear Modulus(G)	71.46	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00610	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.110	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tm3 In1 N1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control