Tm3 Ga1 C1
semiconductorTm₃GaC is a ternary carbide compound belonging to the MAX phase family, where rare-earth elements (here, thulium) combine with transition metals and carbon to form layered ceramic structures. This is an experimental research material rather than an established commercial product; it represents the broader class of rare-earth-doped MAX phases being investigated for their unique combination of ceramic stiffness with metallic damage tolerance and machinability. Potential applications focus on high-temperature structural components, oxidation-resistant coatings, and specialized electronic or thermal management devices where rare-earth doping may enhance performance or enable new functionalities beyond conventional carbides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |