Tm2 Zn1 Os1

semiconductor

· Tm2 Zn1 Os1

Tm₂Zn₁Os₁ is an intermetallic compound combining thulium (rare earth), zinc, and osmium in a defined stoichiometric ratio. This is a research-stage material; such rare-earth intermetallics are typically investigated for potential applications in high-temperature structural use, magnetic devices, or as precursors for functional ceramics, though industrial deployment remains limited. Engineers would consider this material family primarily in advanced research contexts where the unique electronic or thermal properties of rare-earth–transition metal combinations offer advantages over conventional alloys.

experimental intermetallic compoundsrare-earth research materialshigh-temperature materials developmentmagnetic material precursorsmaterials physics characterization

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01610	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4350	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tm2 Zn1 Os1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control