Tm₂S₁O₂ is a rare-earth oxysulfide semiconductor compound combining thulium with sulfur and oxygen. This material belongs to the family of mixed-anion semiconductors that are primarily investigated in research contexts for optoelectronic and photonic applications, where the combination of rare-earth and chalcogenide character offers potential advantages in light emission and absorption across infrared to visible wavelengths.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 134.0 | GPa | — | ||
Shear Modulus(G) | 74.83 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.208 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.487 | eV/atom | — |