Tm1 Tl1 O2

semiconductor

· Tm1 Tl1 O2

Tm₁Tl₁O₂ is a mixed-metal oxide semiconductor compound combining thulium and thallium with oxygen, representing a rare-earth and post-transition metal oxide system. This is a research-phase material rather than an established commercial product; compounds in this family are primarily investigated for optoelectronic and photonic applications where the combination of rare-earth and heavy-metal oxide properties may enable tunable bandgap behavior and specialized light-emission characteristics. Engineers would consider such materials when conventional semiconductors (silicon, gallium arsenide) cannot meet requirements for specific wavelength ranges, radiation hardness, or high-temperature photonic functionality.

research photonicsspecialized optoelectronicshigh-temperature sensor windowsradiation-resistant optical devicesrare-earth oxide opticsexperimental semiconductor systems

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	99.42	GPa	—
Shear Modulus(G)	50.43	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.584	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.628	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tm1 Tl1 O2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control