Tm₁Ge₂Ru₂ is an intermetallic semiconductor compound combining thulium, germanium, and ruthenium in a defined stoichiometric ratio. This material belongs to the class of ternary intermetallics and is primarily of research interest rather than established commercial production, with potential applications in advanced thermoelectric systems, quantum materials research, and high-temperature semiconductor devices where rare-earth metal incorporation may provide enhanced electronic or thermal properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 142.3 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 53.33 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00920 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5890 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data