Tm1 Bi2 Br1 O4

semiconductor

· Tm1 Bi2 Br1 O4

Tm₁Bi₂Br₁O₄ is an experimental mixed-metal oxyhalide semiconductor combining thulium, bismuth, bromine, and oxygen in a layered or complex crystal structure. This compound belongs to the broader family of halide perovskites and bismuth-based semiconductors, which are actively researched for next-generation optoelectronic and photovoltaic applications due to their tunable bandgaps and potential lead-free stability. The inclusion of thulium (a rare-earth element) suggests potential applications in photoluminescence, infrared sensing, or specialty optical devices where rare-earth doping provides enhanced functionality.

experimental optoelectronicsphotovoltaic researchinfrared sensorsrare-earth photoluminescencehalide semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	83.48	GPa	—
Shear Modulus(G)	46.43	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.529	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.188	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tm1 Bi2 Br1 O4

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control