TlTaS₃ is a ternary chalcogenide semiconductor compound combining thallium, tantalum, and sulfur. This is a research-phase material primarily investigated for its layered crystal structure and electronic properties rather than established industrial production. Interest in this compound centers on its potential applications in optoelectronics and thermoelectrics, where the combination of heavy elements and sulfur bonding may enable useful bandgap engineering, though it remains largely confined to fundamental materials science research rather than commercial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7800 | eV | — |