TlTaOFN is an oxynitride semiconductor compound containing thallium, tantalium, oxygen, and nitrogen elements. This is a research-phase material belonging to the transition metal oxynitride family, which is being investigated for photocatalytic and optoelectronic applications where bandgap engineering through mixed anion chemistry offers advantages over conventional single-anion semiconductors. The oxynitride class is notable for its ability to achieve tunable electronic properties and visible-light activity, positioning it as a potential alternative to traditional oxide or nitride semiconductors in energy conversion and environmental remediation applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3000 | eV | — | ||
Magnetic Moment(μB) | 6.359e-15 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.1800 | eV/atom | — |