TlSiO₂N is an experimental oxynitride ceramic compound containing thallium, silicon, oxygen, and nitrogen elements. This material belongs to the broader family of advanced ceramics and oxynitrides, which are primarily explored in research settings for high-temperature and electronic applications where conventional oxides fall short. While not yet established in mainstream industrial production, oxynitride ceramics like this composition are investigated for potential use in extreme-environment structural components, electronic devices, and catalytic systems where the incorporation of nitrogen into a silicate lattice can enhance hardness, thermal stability, and chemical resistance compared to purely oxide-based alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | -0.00211 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.080 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data