TlInSe2 is a ternary semiconductor compound belonging to the I-III-VI2 family, combining thallium, indium, and selenium in a layered crystal structure. This material is primarily of research and developmental interest for optoelectronic and photonic applications, particularly where infrared sensitivity, nonlinear optical properties, or tunable bandgap characteristics are valuable; it remains largely experimental compared to more established semiconductors like GaAs or InP, but offers potential advantages in mid-infrared detection and frequency conversion applications where its specific electronic and optical properties align with device requirements.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 29.20 | GPa | — | ||
Poisson's Ratio(ν) | 0.2900 | - | — | ||
Shear Modulus(G) | 14.56 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.889 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.440 | eV | — | ||
| ↳ | 0.9730 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 51.14 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -187.7 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5375 | eV/atom | — |