TlInN3 — Properties & Data | MatWorld

TlInN3

ceramic

· TlInN3

TlInN3 is a ternary nitride ceramic compound containing thallium, indium, and nitrogen, belonging to the family of III-V and mixed-metal nitride semiconductors. This material is primarily of research and development interest rather than established industrial production, with potential applications in advanced optoelectronic and high-temperature semiconductor devices where its unique electronic band structure could offer advantages over binary nitride alternatives. The incorporation of thallium into an indium nitride matrix represents an emerging approach to engineering nitride materials for specialized applications requiring tailored bandgap and thermal properties.

Advanced semiconductor researchOptoelectronic devices (experimental)High-temperature electronics (research)Wide-bandgap materials developmentIII-V nitride engineering

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	5.000	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.000	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

TlInN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental