TlIn2GaTe4 is a quaternary semiconductor ceramic compound containing thallium, indium, gallium, and tellurium elements. This material belongs to the family of chalcogenide semiconductors and is primarily of research and development interest rather than established industrial production. The compound is investigated for potential applications in infrared optics, nonlinear optical devices, and specialized semiconductor applications where its bandgap properties and crystal structure may offer advantages over more conventional III-V semiconductors or oxide ceramics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.504 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2320 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 15.52 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01420 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.3360 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data