TlGaO3 is a ternary oxide semiconductor compound composed of thallium, gallium, and oxygen, representing a materials chemistry exploration within the thallium-gallium oxide family. This compound remains largely in the research and development phase rather than established industrial production, with potential applications in specialized optoelectronic devices, photovoltaic systems, and high-temperature ceramic applications where its unique electronic and thermal properties could offer advantages over conventional alternatives. The material's significance lies in its potential to bridge band gap engineering in wide-bandgap semiconductor systems, though practical engineering adoption requires further characterization and processing development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.5580 | eV | DFT · PBE | ||
| ↳ | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 0.2757 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.454 | eV/atom | DFT | ||
| ↳ | 0.8400 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data