TlCdS₂ is a ternary semiconductor compound combining thallium, cadmium, and sulfur, belonging to the I-III-VI₂ family of chalcogenide semiconductors. This material is primarily of research and developmental interest for infrared optoelectronic applications, where its direct bandgap and optical properties make it a candidate for detectors and emitters in the infrared spectrum. Engineers consider such ternary chalcogenides when seeking alternatives to binary semiconductors with tunable bandgap, improved lattice matching for heterostructures, or specific absorption characteristics unavailable in more common materials like CdS or CdTe.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 54.51 | GPa | — | ||
Poisson's Ratio(ν) | 0.3700 | - | — | ||
Shear Modulus(G) | 17.17 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.801 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.500 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | 6.670 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1220 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3689 | eV/atom | — |