TlAsSe2

semiconductor

· TlAsSe2

TlAsSe₂ is a ternary semiconductor compound combining thallium, arsenic, and selenium in a layered crystal structure. This is primarily a research material studied for its potential in infrared detection, optoelectronics, and quantum materials applications, rather than a mature commercial compound. The material is notable within the thallium chalcogenide family for its tunable bandgap and layered geometry, which can enable novel electronic and photonic properties; however, thallium toxicity and synthesis complexity currently limit widespread engineering adoption compared to more conventional semiconductors like GaAs or InSb.

infrared detectors (research)quantum materials (theoretical)optoelectronic devices (exploratory)layered semiconductor heterostructuresthermal imaging sensors (developmental)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)2 entries	1.400	eV	—
↳	1.350	eV	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

TlAsSe2

Electrical Properties

Regulatory Screening

Environmental

Export Control