TlAsS₂ is a ternary semiconductor compound composed of thallium, arsenic, and sulfur, belonging to the class of chalcogenide semiconductors. This material is primarily of research interest rather than established in mainstream industrial production, with potential applications in infrared optics, photovoltaic devices, and specialized semiconductor electronics where its band gap and optical properties may offer advantages. The compound represents an understudied member of the thallium chalcogenide family, which continues to attract academic attention for niche optoelectronic applications, though practical deployment remains limited compared to conventional III-V or II-VI semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 20.33 | GPa | — | ||
Poisson's Ratio(ν) | 0.3100 | - | — | ||
Shear Modulus(G) | 10.34 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.357 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 2.220 | eV | — | ||
| ↳ | 2.150 | eV | — | ||
| ↳ | 1.581 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -300.2 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3188 | eV/atom | — |