Tl6 As2 O8

semiconductor

· Tl6 As2 O8

Tl₆As₂O₈ is an inorganic oxide semiconductor compound containing thallium and arsenic, belonging to the family of mixed-metal oxides investigated for electronic and photonic applications. This is primarily a research-phase material with potential relevance in optoelectronic devices and radiation detection, though industrial adoption remains limited compared to more established semiconductors like GaAs or CdTe. The material's thallium content makes it of particular interest for specialized sensing and high-energy physics applications where its specific band structure and radiation response characteristics may offer advantages over conventional alternatives.

experimental semiconductorsradiation detectionoptoelectronic researchhigh-energy physics instrumentationphotonic devices (developmental)specialized sensing materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.582	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.135	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tl6 As2 O8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control