Tl4GaIn3S8

semiconductor

· Tl4GaIn3S8

Tl₄GaIn₃S₈ is a quaternary semiconductor compound belonging to the I–III–VI family of chalcogenide materials, combining thallium, gallium, indium, and sulfur into a layered or complex crystal structure. This is a research-phase material primarily investigated for optoelectronic and photonic applications where wide bandgap semiconductors or nonlinear optical properties are valuable; it has not yet reached significant commercial production. The material is notable within its family for potential infrared detection, frequency conversion, and solid-state laser applications, though alternatives such as GaAs, InP, and cadmium-based compounds remain more mature and widely deployed.

infrared detectors and sensorsnonlinear optics and frequency conversionresearch photonics and optoelectronicsnext-generation semiconductor devicesmaterials science exploration

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.630	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tl4GaIn3S8

Electrical Properties

Regulatory Screening

Environmental

Export Control