Tl4 V2 O7

semiconductor

· Tl4 V2 O7

Thallium vanadium oxide (Tl₄V₂O₇) is a mixed-metal oxide semiconductor compound combining thallium and vanadium in a layered crystalline structure. This is primarily a research material studied for its electronic and ionic transport properties, with potential applications in solid-state devices where the unique vanadium oxidation states and thallium coordination offer tunable electrical characteristics. The material represents an emerging class of complex oxides being investigated for next-generation energy storage, sensing, and catalytic applications, though it remains largely experimental and has not achieved widespread industrial adoption.

solid-state electrochemistry researchexperimental semiconductor devicesion-conducting electrolytescatalysis developmentmaterials discovery platformshigh-temperature electronic applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	35.50	GPa	—
Shear Modulus(G)	15.50	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.464	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.839	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Tl4 V2 O7

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control