Tl₃V₁ is an intermetallic compound semiconductor combining thallium and vanadium in a specific stoichiometric ratio. This is a research-phase material primarily of interest in condensed matter physics and materials science rather than established industrial production, belonging to the broader family of transition metal-main group intermetallics that exhibit interesting electronic and structural properties. The material's potential lies in fundamental studies of electronic band structure and physical property exploration, with possible future applications in niche semiconductor or thermoelectric contexts if performance characteristics prove advantageous over conventional alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 56.48 | GPa | — | ||
Shear Modulus(G) | 13.67 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00140 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.6480 | eV/atom | — |