Tl₂Te₃ is a binary semiconductor compound composed of thallium and tellurium, belonging to the chalcogenide family of materials. This material is primarily of research and development interest rather than established in high-volume production, with investigation focused on thermoelectric applications and narrow-bandgap semiconductor behavior. Tl₂Te₃ and related thallium tellurides are explored for their potential in thermoelectric energy conversion, infrared detection, and solid-state cooling devices where the combination of low thermal conductivity and electronic transport properties may offer advantages over conventional semiconductors; however, toxicity concerns and material stability challenges have limited broader industrial adoption compared to alternatives like bismuth telluride or lead telluride systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 24.49 | GPa | — | ||
Poisson's Ratio(ν) | 0.3300 | - | — | ||
Shear Modulus(G) | 9.950 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.658 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.6900 | eV | — | ||
| ↳ | 0.5930 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -173.2 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01490 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1945 | eV/atom | — |